TY - JOUR
T1 - Design of Low Phase Noise VCO Considering C/L Ratio of LC Resonator in 0.18-μm CMOS Technology
AU - Jahan, Nusrat
AU - Barakat, Adel
AU - Pokharel, Ramesh K.
N1 - Publisher Copyright:
© 2004-2012 IEEE.
PY - 2021/12/1
Y1 - 2021/12/1
N2 - A voltage-controlled oscillator (VCO) is usually designed by maximizing the quality (Q-) factor of the LC-tank resonator to realize a low phase noise. For the same frequency, the ratio of C/L affects the loaded Q-factor (Q L) and then phase noise of the VCO. This affect has not been considered so far in the design of VCO because the conventional on-chip spiral inductor cannot be optimized for C/L ratio. This brief first investigates the effects of C/L ratio on the phase noise, and a design methodology for optimized C/L ratio using defected ground structure (DGS) resonator is presented. Then, the resonators were further evaluated based on LgL-product simulation for a fixed I bias. Employing the proposed resonator, a very low phase noise K U-band VCO is designed and implemented in 0.18-μ m CMOS technology. The measurement result shows that the proposed VCO has a phase noise of-110.77 dBc/Hz at 1 MHz offset of 17.5 GHz carrier frequency and a frequency tuning range of 8.7%. The VCO consumes 2.3 mW power, which results in a figure of merit (FoM) of-191.95 dB.
AB - A voltage-controlled oscillator (VCO) is usually designed by maximizing the quality (Q-) factor of the LC-tank resonator to realize a low phase noise. For the same frequency, the ratio of C/L affects the loaded Q-factor (Q L) and then phase noise of the VCO. This affect has not been considered so far in the design of VCO because the conventional on-chip spiral inductor cannot be optimized for C/L ratio. This brief first investigates the effects of C/L ratio on the phase noise, and a design methodology for optimized C/L ratio using defected ground structure (DGS) resonator is presented. Then, the resonators were further evaluated based on LgL-product simulation for a fixed I bias. Employing the proposed resonator, a very low phase noise K U-band VCO is designed and implemented in 0.18-μ m CMOS technology. The measurement result shows that the proposed VCO has a phase noise of-110.77 dBc/Hz at 1 MHz offset of 17.5 GHz carrier frequency and a frequency tuning range of 8.7%. The VCO consumes 2.3 mW power, which results in a figure of merit (FoM) of-191.95 dB.
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U2 - 10.1109/TCSII.2021.3079309
DO - 10.1109/TCSII.2021.3079309
M3 - Article
AN - SCOPUS:85105880985
SN - 1549-7747
VL - 68
SP - 3513
EP - 3517
JO - IEEE Transactions on Circuits and Systems II: Express Briefs
JF - IEEE Transactions on Circuits and Systems II: Express Briefs
IS - 12
ER -