Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD

Takeaki Matsunaga; Yuki Kawashima; Kazunori Koga; Kenta Nakahara; William Makoto Nakamura; Giichiro Uchida; Naho Itagaki; Daisuke Yamashita; Hidefumi Matsuzaki; Masaharu Shiratani

doi:10.1109/TENCON.2010.5686679

Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD

Takeaki Matsunaga, Yuki Kawashima, Kazunori Koga, Kenta Nakahara, William Makoto Nakamura, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH₃ and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity Φ_C were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.

Original language	English
Title of host publication	TENCON 2010 - 2010 IEEE Region 10 Conference
Pages	2219-2221
Number of pages	3
DOIs	https://doi.org/10.1109/TENCON.2010.5686679
Publication status	Published - 2010
Event	2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan Duration: Nov 21 2010 → Nov 24 2010

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other	2010 IEEE Region 10 Conference, TENCON 2010
Country/Territory	Japan
City	Fukuoka
Period	11/21/10 → 11/24/10

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TENCON.2010.5686679

Cite this

Matsunaga, T., Kawashima, Y., Koga, K., Nakahara, K., Nakamura, W. M., Uchida, G., Itagaki, N., Yamashita, D., Matsuzaki, H., & Shiratani, M. (2010). Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2219-2221). Article 5686679 (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686679

Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. / Matsunaga, Takeaki; Kawashima, Yuki; Koga, Kazunori et al.
TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2219-2221 5686679 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsunaga, T, Kawashima, Y, Koga, K, Nakahara, K, Nakamura, WM, Uchida, G, Itagaki, N, Yamashita, D, Matsuzaki, H & Shiratani, M 2010, Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686679, IEEE Region 10 Annual International Conference, Proceedings/TENCON, pp. 2219-2221, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686679

@inproceedings{cfe0442ec41a4cce9c6a83d2ea976a6b,

title = "Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD",

abstract = "We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.",

author = "Takeaki Matsunaga and Yuki Kawashima and Kazunori Koga and Kenta Nakahara and Nakamura, {William Makoto} and Giichiro Uchida and Naho Itagaki and Daisuke Yamashita and Hidefumi Matsuzaki and Masaharu Shiratani",

year = "2010",

doi = "10.1109/TENCON.2010.5686679",

language = "English",

isbn = "9781424468904",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

pages = "2219--2221",

booktitle = "TENCON 2010 - 2010 IEEE Region 10 Conference",

note = "2010 IEEE Region 10 Conference, TENCON 2010 ; Conference date: 21-11-2010 Through 24-11-2010",

}

TY - GEN

T1 - Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD

AU - Matsunaga, Takeaki

AU - Kawashima, Yuki

AU - Koga, Kazunori

AU - Nakahara, Kenta

AU - Nakamura, William Makoto

AU - Uchida, Giichiro

AU - Itagaki, Naho

AU - Yamashita, Daisuke

AU - Matsuzaki, Hidefumi

AU - Shiratani, Masaharu

PY - 2010

Y1 - 2010

N2 - We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.

AB - We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.

UR - http://www.scopus.com/inward/record.url?scp=79951669272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951669272&partnerID=8YFLogxK

U2 - 10.1109/TENCON.2010.5686679

DO - 10.1109/TENCON.2010.5686679

M3 - Conference contribution

AN - SCOPUS:79951669272

SN - 9781424468904

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

SP - 2219

EP - 2221

BT - TENCON 2010 - 2010 IEEE Region 10 Conference

T2 - 2010 IEEE Region 10 Conference, TENCON 2010

Y2 - 21 November 2010 through 24 November 2010

ER -

Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD

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