Abstract
In this paper, the dependency of Arabidopsis thaliana growth on dc field intensity was studied. One group of Arabidopsis thaliana seeds was cultivated under one intensity of electric field. Four values of 2.5, 5.0, 10.0 and 15.0 kV/m were chosen for applied field intensity. Applying duration was four days. Then, seed germination rate and stem length of seedling were obtained. As a result, it is shown that dc field improves seed germination rate and seedling stem length. Also, the length of seedling stem is increased with dc field up to 10.0 kV/m with comparatively high reliability by the statistical test, while above 10.0 kV/m it seems to saturate.
| Original language | English |
|---|---|
| Article number | 6783087 |
| Pages (from-to) | 913-917 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Dielectrics and Electrical Insulation |
| Volume | 21 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Apr 2014 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering