Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

M. Okamoto; K. Kakushima; Y. Kataoka; A. Nishiyama; N. Sugii; H. Wakabayashi; K. Tsutsui; H. Iwai; W. Saito

doi:10.1109/WiPDA.2014.6964631

Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The dependency of Ti atom composition in Ti-C mixed electrodes on Ohmic characteristics for AlGaN/GaN structure is examined by elucidating the role of both Ti and C atoms. Owing to AlGaN surface reduction by reaction with C atoms with thermal treatment, an enhanced reaction of Ti atoms and AlGaN layer has been confirmed. The border of reactive layer and the remaining AlGaN layer has shown rather uniform interface, which is contrast to conventional metallic spike formation. Higher Ti atom composition has revealed lower Ohmic contact resistance, especially 2.6 Ωmm with Ti:C of 5:1. The proposed reaction mechanism gives a new guideline to achieve uniform electron conduction for lower contact resistance.

Original language	English
Title of host publication	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	94-97
Number of pages	4
ISBN (Electronic)	9781479954933
DOIs	https://doi.org/10.1109/WiPDA.2014.6964631
Publication status	Published - Nov 20 2014
Externally published	Yes
Event	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States Duration: Oct 13 2014 → Oct 15 2014

Publication series

Name	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Country/Territory	United States
City	Knoxville
Period	10/13/14 → 10/15/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1109/WiPDA.2014.6964631

Cite this

Okamoto, M., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Iwai, H., & Saito, W. (2014). Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 94-97). Article 6964631 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964631

Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure. / Okamoto, M.; Kakushima, K.; Kataoka, Y. et al.
2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 94-97 6964631 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Okamoto, M, Kakushima, K, Kataoka, Y, Nishiyama, A, Sugii, N, Wakabayashi, H, Tsutsui, K, Iwai, H & Saito, W 2014, Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure. in 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014., 6964631, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Institute of Electrical and Electronics Engineers Inc., pp. 94-97, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Knoxville, United States, 10/13/14. https://doi.org/10.1109/WiPDA.2014.6964631

Okamoto M, Kakushima K, Kataoka Y, Nishiyama A, Sugii N, Wakabayashi H et al. Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 94-97. 6964631. (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). doi: 10.1109/WiPDA.2014.6964631

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title = "Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure",

abstract = "The dependency of Ti atom composition in Ti-C mixed electrodes on Ohmic characteristics for AlGaN/GaN structure is examined by elucidating the role of both Ti and C atoms. Owing to AlGaN surface reduction by reaction with C atoms with thermal treatment, an enhanced reaction of Ti atoms and AlGaN layer has been confirmed. The border of reactive layer and the remaining AlGaN layer has shown rather uniform interface, which is contrast to conventional metallic spike formation. Higher Ti atom composition has revealed lower Ohmic contact resistance, especially 2.6 Ωmm with Ti:C of 5:1. The proposed reaction mechanism gives a new guideline to achieve uniform electron conduction for lower contact resistance.",

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AU - Sugii, N.

AU - Wakabayashi, H.

AU - Tsutsui, K.

AU - Iwai, H.

AU - Saito, W.

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AB - The dependency of Ti atom composition in Ti-C mixed electrodes on Ohmic characteristics for AlGaN/GaN structure is examined by elucidating the role of both Ti and C atoms. Owing to AlGaN surface reduction by reaction with C atoms with thermal treatment, an enhanced reaction of Ti atoms and AlGaN layer has been confirmed. The border of reactive layer and the remaining AlGaN layer has shown rather uniform interface, which is contrast to conventional metallic spike formation. Higher Ti atom composition has revealed lower Ohmic contact resistance, especially 2.6 Ωmm with Ti:C of 5:1. The proposed reaction mechanism gives a new guideline to achieve uniform electron conduction for lower contact resistance.

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Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

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