Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs

T. Sakaguchi, K. Akiyama, K. Yamamoto, D. Wang, H. Nakashima

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	529-530
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2017.k-3-06
Publication status	Published - Sept 21 2017
Event	2017 International Conference on Solid State Devices and Materials (SSDM2017) - Sendai International Center, Sendai, Japan Duration: Sept 19 2017 → Sept 22 2017

Conference	2017 International Conference on Solid State Devices and Materials (SSDM2017)
Country/Territory	Japan
City	Sendai
Period	9/19/17 → 9/22/17

Access to Document

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title = "Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs",

author = "T. Sakaguchi and K. Akiyama and K. Yamamoto and D. Wang and H. Nakashima",

year = "2017",

month = sep,

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doi = "10.7567/ssdm.2017.k-3-06",

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note = "2017 International Conference on Solid State Devices and Materials (SSDM2017) ; Conference date: 19-09-2017 Through 22-09-2017",

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T1 - Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs

AU - Sakaguchi, T.

AU - Akiyama, K.

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

PY - 2017/9/21

Y1 - 2017/9/21

U2 - 10.7567/ssdm.2017.k-3-06

DO - 10.7567/ssdm.2017.k-3-06

M3 - Paper

SP - 529

EP - 530

T2 - 2017 International Conference on Solid State Devices and Materials (SSDM2017)

Y2 - 19 September 2017 through 22 September 2017

ER -