Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	777-778
Number of pages	2
DOIs	https://doi.org/10.7567/SSDM.2019.PS-4-28
Publication status	Published - Sept 2019
Event	2019 International Conference on Solid State Devices and Materials (SSDM2019) - Nagoya University, Nagoya, Japan Duration: Sept 2 2019 → Sept 5 2019

Conference	2019 International Conference on Solid State Devices and Materials (SSDM2019)
Country/Territory	Japan
City	Nagoya
Period	9/2/19 → 9/5/19

Access to Document

Oka, R, Yamamoto, K , Wang, D, Nakashima, H, Hishiki, S & Kawamura, K 2019, 'Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC', Paper presented at 2019 International Conference on Solid State Devices and Materials (SSDM2019), Nagoya, Japan, 9/2/19 - 9/5/19 pp. 777-778. https://doi.org/10.7567/SSDM.2019.PS-4-28

@conference{89dd0d0559e24c1fbe8274a352c36353,

title = "Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC",

author = "R. Oka and K. Yamamoto and Dong Wang and H. Nakashima and S. Hishiki and K. Kawamura",

year = "2019",

month = sep,

doi = "10.7567/SSDM.2019.PS-4-28",

language = "English",

pages = "777--778",

note = "2019 International Conference on Solid State Devices and Materials (SSDM2019) ; Conference date: 02-09-2019 Through 05-09-2019",

}

TY - CONF

T1 - Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC

AU - Oka, R.

AU - Yamamoto, K.

AU - Wang, Dong

AU - Nakashima, H.

AU - Hishiki, S.

AU - Kawamura, K.

PY - 2019/9

Y1 - 2019/9

U2 - 10.7567/SSDM.2019.PS-4-28

DO - 10.7567/SSDM.2019.PS-4-28

M3 - Paper

SP - 777

EP - 778

T2 - 2019 International Conference on Solid State Devices and Materials (SSDM2019)

Y2 - 2 September 2019 through 5 September 2019

ER -