Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD

Masanori Tsukuda; Ichiro Omura; Wataru Saito; Tomokazu Domon

Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD

Masanori Tsukuda, Ichiro Omura, Wataru Saito, Tomokazu Domon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter using a 600 V Superjunction MOSFET (SJ-MOSFET) and a silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W Icc, which is the target for the year 2018 (Fig. 1).

Original language	English
Title of host publication	2006 4th International Conference on Integrated Power Systems, CIPS 2006
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9783800729722
Publication status	Published - 2006
Externally published	Yes
Event	4th International Conference on Integrated Power Systems, CIPS 2006 - Naples, Italy Duration: Jun 7 2006 → Jun 9 2006

Publication series

Name	2006 4th International Conference on Integrated Power Systems, CIPS 2006

Conference

Conference	4th International Conference on Integrated Power Systems, CIPS 2006
Country/Territory	Italy
City	Naples
Period	6/7/06 → 6/9/06

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Energy Engineering and Power Technology
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Cite this

Tsukuda, M., Omura, I., Saito, W., & Domon, T. (2006). Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD. In 2006 4th International Conference on Integrated Power Systems, CIPS 2006 Article 5758045 (2006 4th International Conference on Integrated Power Systems, CIPS 2006). Institute of Electrical and Electronics Engineers Inc..

Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD. / Tsukuda, Masanori; Omura, Ichiro; Saito, Wataru et al.
2006 4th International Conference on Integrated Power Systems, CIPS 2006. Institute of Electrical and Electronics Engineers Inc., 2006. 5758045 (2006 4th International Conference on Integrated Power Systems, CIPS 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsukuda, M, Omura, I, Saito, W & Domon, T 2006, Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD. in 2006 4th International Conference on Integrated Power Systems, CIPS 2006., 5758045, 2006 4th International Conference on Integrated Power Systems, CIPS 2006, Institute of Electrical and Electronics Engineers Inc., 4th International Conference on Integrated Power Systems, CIPS 2006, Naples, Italy, 6/7/06.

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abstract = "This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter using a 600 V Superjunction MOSFET (SJ-MOSFET) and a silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W Icc, which is the target for the year 2018 (Fig. 1).",

author = "Masanori Tsukuda and Ichiro Omura and Wataru Saito and Tomokazu Domon",

year = "2006",

language = "English",

series = "2006 4th International Conference on Integrated Power Systems, CIPS 2006",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Domon, Tomokazu

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AB - This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter using a 600 V Superjunction MOSFET (SJ-MOSFET) and a silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W Icc, which is the target for the year 2018 (Fig. 1).

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T2 - 4th International Conference on Integrated Power Systems, CIPS 2006

Y2 - 7 June 2006 through 9 June 2006

ER -

Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

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