Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

Wataru Saito; Tomokazu Domon; Ichiro Omura; Masahiko Kuraguchi; Yoshiharu Takada; Kunio Tsuda; Masakazu Yamaguchi

doi:10.1109/LED.2006.873756

Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

Wataru Saito, Tomokazu Domon, Ichiro Omura, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Masakazu Yamaguchi

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.

Original language	English
Pages (from-to)	326-328
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/LED.2006.873756
Publication status	Published - May 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.873756

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abstract = "A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.",

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T1 - Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

AU - Saito, Wataru

AU - Domon, Tomokazu

AU - Omura, Ichiro

AU - Kuraguchi, Masahiko

AU - Takada, Yoshiharu

AU - Tsuda, Kunio

AU - Yamaguchi, Masakazu

PY - 2006/5

Y1 - 2006/5

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AB - A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.

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Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

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