TY - JOUR
T1 - Degradation characteristics of SiC power devices for DC circuit breaker by repetitive unclamped inductive switching test
AU - Sagara, Mitsuhiko
AU - Wada, Keiji
AU - Nishizawa, Shin ichi
N1 - Funding Information:
This paper is based on results obtained from a project supported by the New Generation Power Electronics Research Consortium Japan (NPERC-J). The authors would like to thank Prof. Wataru Saito (Kyushu Univ.) for fruitful discussions and important contribution to this work.
Publisher Copyright:
© 2019 Elsevier Ltd
PY - 2019/9
Y1 - 2019/9
N2 - This paper investigates the degradation of SiC power devices for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. The ON resistance of SiC power devices such as MOSFET and JFET are lower compared with Si devices. Therefore, SiC power devices are suitable for use as DC circuit breakers. Several papers have discussed degradation of SiC power devices; however, few studies have determined a suitable power device for a DC breaker from a degradation standpoint. In this paper, four types of SiC devices were subjected to repetitive UIS tests. Our research demonstrated SiC-JFET to be suitable for a DC breaker.
AB - This paper investigates the degradation of SiC power devices for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. The ON resistance of SiC power devices such as MOSFET and JFET are lower compared with Si devices. Therefore, SiC power devices are suitable for use as DC circuit breakers. Several papers have discussed degradation of SiC power devices; however, few studies have determined a suitable power device for a DC breaker from a degradation standpoint. In this paper, four types of SiC devices were subjected to repetitive UIS tests. Our research demonstrated SiC-JFET to be suitable for a DC breaker.
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U2 - 10.1016/j.microrel.2019.113417
DO - 10.1016/j.microrel.2019.113417
M3 - Article
AN - SCOPUS:85074725143
SN - 0026-2714
VL - 100-101
JO - Microelectronics Reliability
JF - Microelectronics Reliability
M1 - 113417
ER -