Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

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@article{ae1f91aa567049bca008f80784aae59f,

title = "Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth",

author = "Kaoru Toko and Takanori Tanaka and Yasuharu Ohta and 泰造佐道 and Masanobu Miyao and 泰造佐道 and 正信宮尾 and 薫都甲",

year = "2010",

month = oct,

language = "English",

volume = "97",

pages = "152101(1)--152101(3)",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

AU - Toko, Kaoru

AU - Tanaka, Takanori

AU - Ohta, Yasuharu

AU - 佐道, 泰造

AU - Miyao, Masanobu

AU - 佐道, 泰造

AU - 宮尾, 正信

AU - 都甲, 薫

PY - 2010/10

Y1 - 2010/10

M3 - Article

SN - 0003-6951

VL - 97

SP - 152101(1)-152101(3)

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -