TY - GEN
T1 - Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals
AU - Kato, Tomohisa
AU - Kojima, Kazutoshi
AU - Nishizawa, Shin Ichi
AU - Arai, Kazuo
PY - 2005
Y1 - 2005
N2 - We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1-3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.
AB - We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1-3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.
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U2 - 10.4028/0-87849-963-6.315
DO - 10.4028/0-87849-963-6.315
M3 - Conference contribution
AN - SCOPUS:35148812670
SN - 0878499636
SN - 9780878499632
T3 - Materials Science Forum
SP - 315
EP - 318
BT - Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
PB - Trans Tech Publications Ltd
T2 - 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
Y2 - 31 August 2004 through 4 September 2004
ER -