Defect analysis of SiC sublimation growth by the in-situ X-ray topography

T. Kato, N. Oyanagi, H. Yamaguchi, S. Nishizawa, K. Arai

Research output: Contribution to journalConference articlepeer-review


Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Defect analysis of SiC sublimation growth by the in-situ X-ray topography'. Together they form a unique fingerprint.

Cite this