TY - GEN
T1 - Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates
AU - Kamoi, S.
AU - Hasuike, N.
AU - Kisoda, K.
AU - Harima, H.
AU - Morita, K.
AU - Tanaka, S.
AU - Hashimoto, A.
PY - 2010
Y1 - 2010
N2 - We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.
AB - We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.
KW - Graphene
KW - UV Raman spectroscopy
KW - Vicinal 6H-SiC
UR - https://www.scopus.com/pages/publications/77955454742
UR - https://www.scopus.com/pages/publications/77955454742#tab=citedBy
U2 - 10.4028/www.scientific.net/MSF.645-648.611
DO - 10.4028/www.scientific.net/MSF.645-648.611
M3 - Conference contribution
AN - SCOPUS:77955454742
SN - 0878492798
SN - 9780878492794
T3 - Materials Science Forum
SP - 611
EP - 614
BT - Silicon Carbide and Related Materials 2009
PB - Trans Tech Publications Ltd
T2 - 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Y2 - 11 October 2009 through 16 October 2009
ER -