Abstract
Deep levels related to vanadium and chromium in n-type silicon have been studied using deep level transient spectroscopy (DLTS) and concentration profile measurements. In addition to traps due to interstitial species, an electron trap of EC-0.49 eV is observed in vanadium-doped n-type silicon, and three electron traps of EC-0.28, EC-0.45, and EC-0.54 eV are observed in chromium-doped n-type silicon by DLTS. These traps are observed only in the surface region of samples etched chemically with a mixture containing HF and HNO3 and annihilate after annealing at around 200 °C for 30 min. These traps are investigated by annealing and various chemical treatments. It is demonstrated that the traps are due to complexes ofhydrogen and interstitial vanadium or interstitial chromium.
| Original language | English |
|---|---|
| Pages (from-to) | 939-944 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 143-4 |
| Issue number | pt 2 |
| Publication status | Published - 1994 |
| Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering