Current-voltage characteristic of alumina and aluminum nitride with or without electron irradiation

K. Shiiyama; M. M.R. Howlader; Y. Izumi; M. Kutsuwada; S. Matsumura; C. Kinoshita

doi:10.1016/S0022-3115(00)00162-8

Current-voltage characteristic of alumina and aluminum nitride with or without electron irradiation

K. Shiiyama, M. M.R. Howlader, Y. Izumi, M. Kutsuwada, S. Matsumura, C. Kinoshita

Quantum Sciences of Materials

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristics of single- and poly-crystal alumina and aluminum nitride (A1N) were measured at temperatures ranging from room temperature to 723 K with or without 1 MeV electron irradiation in a high voltage electron microscope (HVEM). Both alumina and A1N specimens exhibit non-ohmic I-V characteristics without irradiation. The I-V characteristics in alumina, however, change from non-ohmic to almost ohmic under electron irradiation. But the I-V characteristics in A1N is still non-ohmic under irradiation. There are remarkable differences in I-V characteristics between the alumina and A1N specimens. The non-ohmic behavior is due to the electronic barrier formed near the interface between the titanium electrode and the alumina or A1N specimen. No bulk and surface radiation induced electrical degradation (RIED) was found in A1N up to 1.5 × 10^-5 dpa.

Original language	English
Pages (from-to)	912-916
Number of pages	5
Journal	Journal of Nuclear Materials
Volume	283-287
Issue number	PART II
DOIs	https://doi.org/10.1016/S0022-3115(00)00162-8
Publication status	Published - Jan 1 2000

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Materials Science(all)
Nuclear Energy and Engineering

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10.1016/S0022-3115(00)00162-8

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title = "Current-voltage characteristic of alumina and aluminum nitride with or without electron irradiation",

abstract = "The current-voltage (I-V) characteristics of single- and poly-crystal alumina and aluminum nitride (A1N) were measured at temperatures ranging from room temperature to 723 K with or without 1 MeV electron irradiation in a high voltage electron microscope (HVEM). Both alumina and A1N specimens exhibit non-ohmic I-V characteristics without irradiation. The I-V characteristics in alumina, however, change from non-ohmic to almost ohmic under electron irradiation. But the I-V characteristics in A1N is still non-ohmic under irradiation. There are remarkable differences in I-V characteristics between the alumina and A1N specimens. The non-ohmic behavior is due to the electronic barrier formed near the interface between the titanium electrode and the alumina or A1N specimen. No bulk and surface radiation induced electrical degradation (RIED) was found in A1N up to 1.5 × 10-5 dpa.",

author = "K. Shiiyama and Howlader, {M. M.R.} and Y. Izumi and M. Kutsuwada and S. Matsumura and C. Kinoshita",

year = "2000",

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doi = "10.1016/S0022-3115(00)00162-8",

language = "English",

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TY - JOUR

T1 - Current-voltage characteristic of alumina and aluminum nitride with or without electron irradiation

AU - Shiiyama, K.

AU - Howlader, M. M.R.

AU - Izumi, Y.

AU - Kutsuwada, M.

AU - Matsumura, S.

AU - Kinoshita, C.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The current-voltage (I-V) characteristics of single- and poly-crystal alumina and aluminum nitride (A1N) were measured at temperatures ranging from room temperature to 723 K with or without 1 MeV electron irradiation in a high voltage electron microscope (HVEM). Both alumina and A1N specimens exhibit non-ohmic I-V characteristics without irradiation. The I-V characteristics in alumina, however, change from non-ohmic to almost ohmic under electron irradiation. But the I-V characteristics in A1N is still non-ohmic under irradiation. There are remarkable differences in I-V characteristics between the alumina and A1N specimens. The non-ohmic behavior is due to the electronic barrier formed near the interface between the titanium electrode and the alumina or A1N specimen. No bulk and surface radiation induced electrical degradation (RIED) was found in A1N up to 1.5 × 10-5 dpa.

AB - The current-voltage (I-V) characteristics of single- and poly-crystal alumina and aluminum nitride (A1N) were measured at temperatures ranging from room temperature to 723 K with or without 1 MeV electron irradiation in a high voltage electron microscope (HVEM). Both alumina and A1N specimens exhibit non-ohmic I-V characteristics without irradiation. The I-V characteristics in alumina, however, change from non-ohmic to almost ohmic under electron irradiation. But the I-V characteristics in A1N is still non-ohmic under irradiation. There are remarkable differences in I-V characteristics between the alumina and A1N specimens. The non-ohmic behavior is due to the electronic barrier formed near the interface between the titanium electrode and the alumina or A1N specimen. No bulk and surface radiation induced electrical degradation (RIED) was found in A1N up to 1.5 × 10-5 dpa.

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U2 - 10.1016/S0022-3115(00)00162-8

DO - 10.1016/S0022-3115(00)00162-8

M3 - Article

AN - SCOPUS:21844446101

SN - 0022-3115

VL - 283-287

SP - 912

EP - 916

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

IS - PART II

ER -

Current-voltage characteristic of alumina and aluminum nitride with or without electron irradiation

Abstract

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