Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

Y. Watanabe; J. G. Bednorz; A. Bietsch; Ch Gerber; D. Widmer; A. Beck; S. J. Wind

doi:10.1063/1.1377617

Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO₃ single crystals

Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch Gerber, D. Widmer, A. Beck, S. J. Wind

Research output: Contribution to journal › Article › peer-review

507 Citations (Scopus)

Abstract

Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO₃ single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

Original language	English
Pages (from-to)	3738-3740
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	23
DOIs	https://doi.org/10.1063/1.1377617
Publication status	Published - Jun 4 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1377617

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abstract = "Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.",

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AU - Gerber, Ch

AU - Widmer, D.

AU - Beck, A.

AU - Wind, S. J.

PY - 2001/6/4

Y1 - 2001/6/4

N2 - Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

AB - Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

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Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO₃ single crystals

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