Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura, Masakazu Yamaguchi

Research output: Contribution to journalConference articlepeer-review

23 Citations (Scopus)


Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP. A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V. Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.

Original languageEnglish
Article number4419087
Pages (from-to)869-872
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: Dec 10 2007Dec 12 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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