Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation

Wataru Saito; Masahiko Kuraguchi; Yoshiharu Takada; Kunio Tsuda; Yasunobu Saito; Ichiro Omura; Masakazu Yamaguchi

doi:10.1109/IEDM.2007.4419087

Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura, Masakazu Yamaguchi

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP. A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V. Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.

Original language	English
Article number	4419087
Pages (from-to)	869-872
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419087
Publication status	Published - Dec 1 2007
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4419087

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title = "Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation",

abstract = "Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP. A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V. Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.",

author = "Wataru Saito and Masahiko Kuraguchi and Yoshiharu Takada and Kunio Tsuda and Yasunobu Saito and Ichiro Omura and Masakazu Yamaguchi",

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doi = "10.1109/IEDM.2007.4419087",

language = "English",

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journal = "Technical Digest - International Electron Devices Meeting, IEDM",

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note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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T1 - Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation

AU - Saito, Wataru

AU - Kuraguchi, Masahiko

AU - Takada, Yoshiharu

AU - Tsuda, Kunio

AU - Saito, Yasunobu

AU - Omura, Ichiro

AU - Yamaguchi, Masakazu

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP. A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V. Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.

AB - Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP. A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V. Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.

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DO - 10.1109/IEDM.2007.4419087

M3 - Conference article

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SN - 0163-1918

SP - 869

EP - 872

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4419087

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation

Abstract

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