Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors

Emi Machida; Masahiro Horita; Yasuaki Ishikawa; Yukiharu Uraoka; Hiroshi Ikenoue

Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors

Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue

Faculty of Information Science and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution within the Si films enhances grain growth. In addition, we successfully fabricated the poly-Si TFTs with the use of WLA poly-Si as the channel layer. The output and the transfer characteristics were clearly obtained, and thus we succeeded in the TFT operation.

Original language	English
Title of host publication	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages	111-114
Number of pages	4
Publication status	Published - Oct 31 2012
Event	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan Duration: Jul 4 2012 → Jul 6 2012

Publication series

Name	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Country/Territory	Japan
City	Kyoto
Period	7/4/12 → 7/6/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Machida, E., Horita, M., Ishikawa, Y., Uraoka, Y., & Ikenoue, H. (2012). Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 111-114). Article 6294856 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors. / Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki et al.
Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 111-114 6294856 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Machida, E, Horita, M, Ishikawa, Y, Uraoka, Y & Ikenoue, H 2012, Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors. in Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012., 6294856, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, pp. 111-114, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, Kyoto, Japan, 7/4/12.

Machida E, Horita M, Ishikawa Y, Uraoka Y, Ikenoue H. Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 111-114. 6294856. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Machida, Emi ; Horita, Masahiro ; Ishikawa, Yasuaki et al. / Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors. Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. pp. 111-114 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

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title = "Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors",

abstract = "We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution within the Si films enhances grain growth. In addition, we successfully fabricated the poly-Si TFTs with the use of WLA poly-Si as the channel layer. The output and the transfer characteristics were clearly obtained, and thus we succeeded in the TFT operation.",

author = "Emi Machida and Masahiro Horita and Yasuaki Ishikawa and Yukiharu Uraoka and Hiroshi Ikenoue",

year = "2012",

month = oct,

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series = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",

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booktitle = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",

note = "19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 ; Conference date: 04-07-2012 Through 06-07-2012",

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T1 - Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors

AU - Machida, Emi

AU - Horita, Masahiro

AU - Ishikawa, Yasuaki

AU - Uraoka, Yukiharu

AU - Ikenoue, Hiroshi

PY - 2012/10/31

Y1 - 2012/10/31

N2 - We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution within the Si films enhances grain growth. In addition, we successfully fabricated the poly-Si TFTs with the use of WLA poly-Si as the channel layer. The output and the transfer characteristics were clearly obtained, and thus we succeeded in the TFT operation.

AB - We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution within the Si films enhances grain growth. In addition, we successfully fabricated the poly-Si TFTs with the use of WLA poly-Si as the channel layer. The output and the transfer characteristics were clearly obtained, and thus we succeeded in the TFT operation.

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BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

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ER -

Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors

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