Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021Nanotechnology32055702)

M. Ajmal Khan; Juan Paolo Bermundo; Yasuaki Ishikawa; Hiroshi Ikenoue; Sachie Fujikawa; Eriko Matsuura; Yukio Kashima; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama

doi:10.1088/1361-6528/ac0664

Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021Nanotechnology32055702)

M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama

Applied Energy Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Journal	Nanotechnology
Volume	32
Issue number	36
DOIs	https://doi.org/10.1088/1361-6528/ac0664
Publication status	Published - Jun 17 2021

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/1361-6528/ac0664

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Khan, M. A., Bermundo, J. P., Ishikawa, Y., Ikenoue, H., Fujikawa, S., Matsuura, E., Kashima, Y., Maeda, N., Jo, M., & Hirayama, H. (2021). Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021Nanotechnology32055702). Nanotechnology, 32(36). https://doi.org/10.1088/1361-6528/ac0664

Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021Nanotechnology32055702). / Khan, M. Ajmal; Bermundo, Juan Paolo; Ishikawa, Yasuaki et al.
In: Nanotechnology, Vol. 32, No. 36, 17.06.2021.

Research output: Contribution to journal › Comment/debate › peer-review

Khan, MA, Bermundo, JP, Ishikawa, Y, Ikenoue, H, Fujikawa, S, Matsuura, E, Kashima, Y, Maeda, N, Jo, M & Hirayama, H 2021, 'Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021Nanotechnology32055702)', Nanotechnology, vol. 32, no. 36. https://doi.org/10.1088/1361-6528/ac0664

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AU - Ikenoue, Hiroshi

AU - Fujikawa, Sachie

AU - Matsuura, Eriko

AU - Kashima, Yukio

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AU - Hirayama, Hideki

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Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021Nanotechnology32055702)

All Science Journal Classification (ASJC) codes

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