Abstract
The volume fraction of silicon clusters in amorphous silicon (a-Si:H) films has been investigated using specially designed quartz crystal microbalances (QCMs) together with optical emission spectroscopy (OES). The optical emission intensities of Si* and SiH* and their intensity ratios are selected for comparison with the QCM results. We show that the volume fraction of silicon clusters strongly correlates with not only the electron temperature but also the SiH* intensity. This suggests that the ratios of Si*/SiH* and SiH* can be used to predict the volume fraction of Si clusters in a-Si:H films.
Original language | English |
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Article number | 11NA07 |
Journal | Japanese journal of applied physics |
Volume | 52 |
Issue number | 11 PART 2 |
DOIs | |
Publication status | Published - Nov 2013 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)