Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H2 bonds in the films

Kazunori Koga; Naoto Kaguchi; Masaharu Shiratani; Yukio Watanabe

doi:10.1116/1.1763905

Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H₂ bonds in the films

Kazunori Koga, Naoto Kaguchi, Masaharu Shiratani, Yukio Watanabe

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40 Citations (Scopus)

Abstract

The correlation between hydrogen content associated with the Si-H ₂ bonds in a-Si:H films and volume fraction of clusters was studied. The study was carried out by using the downstream-cluster-collection (DCC) method and by combining the method with cluster suppressed Plasma CVD method. It was found that the DCC method provides information on size distribution density, shape and structure of clusters in the reactor. It was also observed that the incorporation of clusters above about 1 nm into a-Si:H films was an origin of Si-H₂ bonds in the films.

Original language	English
Pages (from-to)	1536-1539
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1763905
Publication status	Published - Jul 2004

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1763905

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Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H₂ bonds in the films. / Koga, Kazunori; Kaguchi, Naoto; Shiratani, Masaharu et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 4, 07.2004, p. 1536-1539.

Research output: Contribution to journal › Article › peer-review

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Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H₂ bonds in the films

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