TY - JOUR
T1 - Correlation between switching field and microstructure of individual Co/Pt dots
AU - Kikuchi, Nobuaki
AU - Murayama, Yusuke
AU - Murakami, Yasukazu
AU - Okamoto, Satoshi
AU - Shindo, Daisuke
AU - Kitakami, Osamu
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/10
Y1 - 2012/10
N2 - The correlation between the microstructure and the magnetization switching field of individual Co/Pt multilayer nanodots with Pt or Ta/Pt underlayers has been investigated by transmission electron microscopy and magnetic force microscopy. The insertion of a 2-nm-thick Ta underlayer promoted the Co/Pt [111] crystal axis orientation and improved the mean switching field and the switching field distribution of nanodot arrays with a diameter of 70nm from 1.4 to 6.9 kOe and from 22 to 8%, respectively. Electron microscopy of individual dots has revealed that all the nanodots without the Ta layer contain (200)-oriented grains, which possibly work as nucleation sites owing to a small perpendicular magnetic anisotropy. However, no structural difference is found among the dots having the same underlayers, suggesting the existence of other factors affecting the switching field distribution.
AB - The correlation between the microstructure and the magnetization switching field of individual Co/Pt multilayer nanodots with Pt or Ta/Pt underlayers has been investigated by transmission electron microscopy and magnetic force microscopy. The insertion of a 2-nm-thick Ta underlayer promoted the Co/Pt [111] crystal axis orientation and improved the mean switching field and the switching field distribution of nanodot arrays with a diameter of 70nm from 1.4 to 6.9 kOe and from 22 to 8%, respectively. Electron microscopy of individual dots has revealed that all the nanodots without the Ta layer contain (200)-oriented grains, which possibly work as nucleation sites owing to a small perpendicular magnetic anisotropy. However, no structural difference is found among the dots having the same underlayers, suggesting the existence of other factors affecting the switching field distribution.
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U2 - 10.1143/JJAP.51.103002
DO - 10.1143/JJAP.51.103002
M3 - Article
AN - SCOPUS:84867784639
SN - 0021-4922
VL - 51
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 10
M1 - 103002
ER -