Correlation between SiH2/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells

Kimitaka Keya; Takashi Kojima; Yoshihiro Torigoe; Susumu Toko; Daisuke Yamashita; Hyunwoong Seo; Naho Itagaki; Kazunori Koga; Masaharu Shiratani

doi:10.7567/JJAP.55.07LE03

Correlation between SiH₂/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells

Kimitaka Keya, Takashi Kojima, Yoshihiro Torigoe, Susumu Toko, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Electronic Devices

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Abstract

We have measured the hydrogen content ratio I _SiH2/I _SiH associated with Si-H₂ and Si-H bonds in p-i-n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I _SiH2/I _SiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I _SiH2/I _SiH correlates well with light-induced degradation of the cells. While a single I-layer has a low I _SiH2/I _SiH of 0.03-0.09, a PIN cell has I _SiH2/I _SiH = 0.18 because many Si-H₂ bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si-H₂ bond formation in the P-layer and at the P/I interface.

Original language	English
Article number	07LE03
Journal	Japanese journal of applied physics
Volume	55
Issue number	7S2
DOIs	https://doi.org/10.7567/JJAP.55.07LE03
Publication status	Published - 2016

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{e5044c566fe14b10b47fea518ade392d,

title = "Correlation between SiH2/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells",

abstract = "We have measured the hydrogen content ratio I SiH2/I SiH associated with Si-H2 and Si-H bonds in p-i-n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I SiH2/I SiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I SiH2/I SiH correlates well with light-induced degradation of the cells. While a single I-layer has a low I SiH2/I SiH of 0.03-0.09, a PIN cell has I SiH2/I SiH = 0.18 because many Si-H2 bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si-H2 bond formation in the P-layer and at the P/I interface.",

author = "Kimitaka Keya and Takashi Kojima and Yoshihiro Torigoe and Susumu Toko and Daisuke Yamashita and Hyunwoong Seo and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

doi = "10.7567/JJAP.55.07LE03",

language = "English",

volume = "55",

journal = "Japanese journal of applied physics",

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T1 - Correlation between SiH2/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells

AU - Keya, Kimitaka

AU - Kojima, Takashi

AU - Torigoe, Yoshihiro

AU - Toko, Susumu

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2016

Y1 - 2016

N2 - We have measured the hydrogen content ratio I SiH2/I SiH associated with Si-H2 and Si-H bonds in p-i-n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I SiH2/I SiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I SiH2/I SiH correlates well with light-induced degradation of the cells. While a single I-layer has a low I SiH2/I SiH of 0.03-0.09, a PIN cell has I SiH2/I SiH = 0.18 because many Si-H2 bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si-H2 bond formation in the P-layer and at the P/I interface.

AB - We have measured the hydrogen content ratio I SiH2/I SiH associated with Si-H2 and Si-H bonds in p-i-n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I SiH2/I SiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I SiH2/I SiH correlates well with light-induced degradation of the cells. While a single I-layer has a low I SiH2/I SiH of 0.03-0.09, a PIN cell has I SiH2/I SiH = 0.18 because many Si-H2 bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si-H2 bond formation in the P-layer and at the P/I interface.

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 7S2

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ER -

Correlation between SiH₂/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells

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