Correlation between ferromagnetism and dopant 3 d metal-oxygen hybridized state lying at the bottom of conduction band in ZnO-based diluted magnetic semiconductor system

Takuto Tsukahara, Satoshi An, Sho Otsuru, Yasuhisa Tezuka, Shunsuke Nozawa, Junichi Adachi, Kenta Akashi, Yuji Inagaki, Tatsuya Kawae, Hirofumi Ishii, Yen Fa Liao, Tetsuya Kida, Satoshi Suehiro, Masashi Nantoh, Koji Ishibashi, Yoichi Ishiwata

Research output: Contribution to journalArticlepeer-review

Abstract

We systematically investigate the unoccupied electronic states, crystal structure, and magnetism of V- and Mn-doped ZnO nanocrystals (NCs). Post-annealing treatment at 300 °C converts diamagnetic V 5 + into magnetic high-spin V 3 + ions, which leads to room-temperature ferromagnetism for the V-doped NCs. In contrast, ferromagnetism does not occur for the Mn-doped NCs. Oxygen 1 s x-ray absorption spectroscopy reveals that the unoccupied metal-oxygen hybridized state lies near the bottom of the conduction band for the V-doped NCs but lies far above it for the Mn-doped NCs. Therefore, the ferromagnetism in a ZnO-based diluted magnetic semiconductor system can be understood within the framework of the n-type carrier-mediated ferromagnetism model.

Original languageEnglish
Article number243904
JournalJournal of Applied Physics
Volume130
Issue number24
DOIs
Publication statusPublished - Dec 28 2021

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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