Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

K. Moto; R. Matsumura; T. Sadoh; H. Ikenoue; M. Miyao

doi:10.1149/07510.0109ecst

Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue, M. Miyao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Crystallization of Ge_1-xSn_x (0.1≤x≤0.2) on quartz substrate by pulsed laser annealing was investigated. Substitutional Sn concentration increase with decreasing pulse number. As a result, GeSn crystals with very high substitutional Sn concentration (∼12%) has been realized for the sample (initial Sn concentration: 15%) with a single shot. These results were attributed to the nonthermal equilibrium growth with higher cooling rate by decreasing pulse number. This technique is expected for application to highspeed thin-film-transistors and high-efficiency optical devices.

Original language	English
Title of host publication	Thin Film Transistors 13, TFT 13
Editors	Y. Kuo
Publisher	Electrochemical Society Inc.
Pages	109-113
Number of pages	5
Edition	10
ISBN (Electronic)	9781607687276, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07510.0109ecst
Publication status	Published - 2016
Event	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: Oct 2 2016 → Oct 7 2016

Publication series

Name	ECS Transactions
Number	10
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	10/2/16 → 10/7/16

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1149/07510.0109ecst

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Moto, K., Matsumura, R., Sadoh, T., Ikenoue, H., & Miyao, M. (2016). Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. In Y. Kuo (Ed.), Thin Film Transistors 13, TFT 13 (10 ed., pp. 109-113). (ECS Transactions; Vol. 75, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0109ecst

Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. / Moto, K.; Matsumura, R.; Sadoh, T. et al.
Thin Film Transistors 13, TFT 13. ed. / Y. Kuo. 10. ed. Electrochemical Society Inc., 2016. p. 109-113 (ECS Transactions; Vol. 75, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Moto, K, Matsumura, R, Sadoh, T, Ikenoue, H & Miyao, M 2016, Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing. in Y Kuo (ed.), Thin Film Transistors 13, TFT 13. 10 edn, ECS Transactions, no. 10, vol. 75, Electrochemical Society Inc., pp. 109-113, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07510.0109ecst

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abstract = "Crystallization of Ge1-xSnx (0.1≤x≤0.2) on quartz substrate by pulsed laser annealing was investigated. Substitutional Sn concentration increase with decreasing pulse number. As a result, GeSn crystals with very high substitutional Sn concentration (∼12%) has been realized for the sample (initial Sn concentration: 15%) with a single shot. These results were attributed to the nonthermal equilibrium growth with higher cooling rate by decreasing pulse number. This technique is expected for application to highspeed thin-film-transistors and high-efficiency optical devices.",

author = "K. Moto and R. Matsumura and T. Sadoh and H. Ikenoue and M. Miyao",

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N2 - Crystallization of Ge1-xSnx (0.1≤x≤0.2) on quartz substrate by pulsed laser annealing was investigated. Substitutional Sn concentration increase with decreasing pulse number. As a result, GeSn crystals with very high substitutional Sn concentration (∼12%) has been realized for the sample (initial Sn concentration: 15%) with a single shot. These results were attributed to the nonthermal equilibrium growth with higher cooling rate by decreasing pulse number. This technique is expected for application to highspeed thin-film-transistors and high-efficiency optical devices.

AB - Crystallization of Ge1-xSnx (0.1≤x≤0.2) on quartz substrate by pulsed laser annealing was investigated. Substitutional Sn concentration increase with decreasing pulse number. As a result, GeSn crystals with very high substitutional Sn concentration (∼12%) has been realized for the sample (initial Sn concentration: 15%) with a single shot. These results were attributed to the nonthermal equilibrium growth with higher cooling rate by decreasing pulse number. This technique is expected for application to highspeed thin-film-transistors and high-efficiency optical devices.

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Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

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