Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors

Y. Tomokiyo, T. Okuyama, S. Matsumura, N. Kuwano, K. Oki

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11 Citations (Scopus)


We have examined the feasibility of the kinematical approximation in determination of absolute values for local lattice parameter from higher-order Laue zone (HOLZ) lines. HOLZ lines of convergent-beam electron diffraction (CBED) were observed under [111] zone axis incidence for Si, III-V compound and alloy semiconductors. The observed line positions are analysed through calculations based on the kinematical and dynamical theories of electron diffraction. In order to compensate for systematic shifts of HOLZ lines caused by the effect of dynamical diffraction, we should use in the kinematical simulation an effective accelerating voltage Ee, instead of an actual one Ea. A reference specimen with a known lattice parameter and composition is necessary for estimation of the effective voltage which depends on the species and composition of materials through the strength of projected crystal potential. It is shown that the effective voltage varies gradually with the composition for III-V semiconductors. The kinematical treatment was applied to ternary alloy semiconductors of Ga0.975In0.025Sb and Ga0.45Al0.55Sb to determine the absolute lattice parameters. It is also shown that the kinematical approximation for the simulation of HOLZ lines is adequate to the routine work and a high accuracy of lattice parameter can be obtained provided a proper reference crystal is used. For III-V alloy semiconductors, compound semiconductors of their end members are useful as a reference and an attainable accuracy of lattice parameter is about 0.1% or better.

Original languageEnglish
Pages (from-to)641-646
Number of pages6
Journalmaterials transactions, jim
Issue number7
Publication statusPublished - 1990

All Science Journal Classification (ASJC) codes

  • General Engineering


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