Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents

J. Kikuchi; S. Akiyoshi; H. Terada; Y. Nozaki; K. Matsuyama

doi:10.1016/j.jmmm.2003.12.771

Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents

J. Kikuchi, S. Akiyoshi, H. Terada, Y. Nozaki, K. Matsuyama

Electronic Devices

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co₇₉Fe ₂₁(3 nm)/Cu(4nm)/Co₇₃Fe₂₇(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.

Original language	English
Pages (from-to)	1895-1897
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	III
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.771
Publication status	Published - May 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2003.12.771

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abstract = "Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co79Fe 21(3 nm)/Cu(4nm)/Co73Fe27(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.",

author = "J. Kikuchi and S. Akiyoshi and H. Terada and Y. Nozaki and K. Matsuyama",

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journal = "Journal of Magnetism and Magnetic Materials",

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AU - Kikuchi, J.

AU - Akiyoshi, S.

AU - Terada, H.

AU - Nozaki, Y.

AU - Matsuyama, K.

PY - 2004/5

Y1 - 2004/5

N2 - Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co79Fe 21(3 nm)/Cu(4nm)/Co73Fe27(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.

AB - Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co79Fe 21(3 nm)/Cu(4nm)/Co73Fe27(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.

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EP - 1897

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - III

ER -

Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents

Abstract

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