Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

Takeaki Yajima; Yasuyuki Hikita; Makoto Minohara; Christopher Bell; Julia A. Mundy; Lena F. Kourkoutis; David A. Muller; Hiroshi Kumigashira; Masaharu Oshima; Harold Y. Hwang

doi:10.1038/ncomms7759

Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

Takeaki Yajima, Yasuyuki Hikita, Makoto Minohara, Christopher Bell, Julia A. Mundy, Lena F. Kourkoutis, David A. Muller, Hiroshi Kumigashira, Masaharu Oshima, Harold Y. Hwang

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

The concept 'the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

Original language	English
Article number	6759
Journal	Nature communications
Volume	6
DOIs	https://doi.org/10.1038/ncomms7759
Publication status	Published - Apr 13 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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10.1038/ncomms7759

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@article{0f15e302e52742469549e205d6c22437,

title = "Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces",

abstract = "The concept 'the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.",

author = "Takeaki Yajima and Yasuyuki Hikita and Makoto Minohara and Christopher Bell and Mundy, {Julia A.} and Kourkoutis, {Lena F.} and Muller, {David A.} and Hiroshi Kumigashira and Masaharu Oshima and Hwang, {Harold Y.}",

note = "Funding Information: We acknowledge experimental support from M. Lippmaa, R. Takahashi, K. Nishio, T. Harada, S. Toyoda and T. Namiki. We acknowledge support from the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SF00515 (T.Y., Y.H., M.M., C.B. and H.Y.H.). Electron microscopy research (J.A.M., D.A.M.) supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Award No. DE-SC0002334, with microscope facility support from the Cornell Center for Materials Research through the National Science Foundation (NSF) Materials Research Science and Engineering Centers program (DMR 1120296). T.Y. also acknowledges graduate fellowship support from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2015 Macmillan Publishers Limited.",

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AU - Yajima, Takeaki

AU - Hikita, Yasuyuki

AU - Minohara, Makoto

AU - Bell, Christopher

AU - Mundy, Julia A.

AU - Kourkoutis, Lena F.

AU - Muller, David A.

AU - Kumigashira, Hiroshi

AU - Oshima, Masaharu

AU - Hwang, Harold Y.

N1 - Funding Information: We acknowledge experimental support from M. Lippmaa, R. Takahashi, K. Nishio, T. Harada, S. Toyoda and T. Namiki. We acknowledge support from the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SF00515 (T.Y., Y.H., M.M., C.B. and H.Y.H.). Electron microscopy research (J.A.M., D.A.M.) supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Award No. DE-SC0002334, with microscope facility support from the Cornell Center for Materials Research through the National Science Foundation (NSF) Materials Research Science and Engineering Centers program (DMR 1120296). T.Y. also acknowledges graduate fellowship support from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2015 Macmillan Publishers Limited.

PY - 2015/4/13

Y1 - 2015/4/13

N2 - The concept 'the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

AB - The concept 'the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

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Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

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