Controllable p-n switching behaviors of GaAs nanowires via an interface effect

Ning Han, Fengyun Wang, Jared J. Hou, Fei Xiu, Senpo Yip, Alvin T. Hui, Takfu Hung, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)


Due to the extraordinary large surface-to-volume ratio, surface effects on semiconductor nanowires have been extensively investigated in recent years for various technological applications. Here, we present a facile interface trapping approach to alter electronic transport properties of GaAs nanowires as a function of diameter utilizing the acceptor-like defect states located between the intrinsic nanowire and its amorphous native oxide shell. Using a nanowire field-effect transistor (FET) device structure, p- to n-channel switching behaviors have been achieved with increasing NW diameters. Interestingly, this oxide interface is shown to induce a space-charge layer penetrating deep into the thin nanowire to deplete all electrons, leading to inversion and thus p-type conduction as compared to the thick and intrinsically n-type GaAs NWs. More generally, all of these might also be applicable to other nanowire material systems with similar interface trapping effects; therefore, careful device design considerations are required for achieving the optimal nanowire device performances.

Original languageEnglish
Pages (from-to)4428-4433
Number of pages6
JournalACS nano
Issue number5
Publication statusPublished - May 22 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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