TY - CHAP
T1 - Control of ZnO nano-crystals synthesized by nanoparticle-assisted pulsed laser deposition using buffer layer and laser irradiation
AU - Nakamura, Daisuke
AU - Shimogaki, Tetsuya
AU - Okazaki, Kota
AU - Palani, I. A.
AU - Higashihata, Mitsuhiro
AU - Okada, Tatsuo
N1 - Funding Information:
A part of this study has been financially supported by Special Coordination Funds for Promoting Science and Technology from Japan Science and Technology Agency and Agency and Grant-in-Aid for Young Scientist (B) from the Japan Society for the Promotion of Science (No. 23760036, 24656053). We are also indebted to the Research Laboratory of High Voltage Electron Microscope of Kyushu University for the use of TEM and the Center of Advanced Instrumental Analysis, Kyushu University for the use of XRD.
PY - 2014
Y1 - 2014
N2 - Various ZnO nanocrystals, such as nanowires, nanorods, and nanowalls, have been successfully synthesized by a nanoparticle-assisted pulsed laser deposition (NAPLD). In this study, we have succeeded in controlling the growth density and position of the ZnO nano crystals with a ZnO buffer layer and a buffer layer patterned by interference laser irradiation, respectively. Vertically aligned ZnO nanowires with low lateral density were grown on the ZnO buffer layer, and each nanowire was grown at the tip of the hexagonal cone-shape ZnO core formed on the layer. The lateral density of the ZnO nanowires can be controlled by the buffer layer thickness. In addition, laser irradiation to the buffer layer can also control the density, because the density of the nanowire grown on the laser-irradiated layer was clearly decreased as compared with no-irradiated layer. Furthermore, patterned growth of ZnO nano crystals was demonstrated using four beam interference patterning. The buffer layer and interference laser irradiation can be used as one of the effective additives to control the growth of the ZnO nano crystals synthesized by NAPLD.
AB - Various ZnO nanocrystals, such as nanowires, nanorods, and nanowalls, have been successfully synthesized by a nanoparticle-assisted pulsed laser deposition (NAPLD). In this study, we have succeeded in controlling the growth density and position of the ZnO nano crystals with a ZnO buffer layer and a buffer layer patterned by interference laser irradiation, respectively. Vertically aligned ZnO nanowires with low lateral density were grown on the ZnO buffer layer, and each nanowire was grown at the tip of the hexagonal cone-shape ZnO core formed on the layer. The lateral density of the ZnO nanowires can be controlled by the buffer layer thickness. In addition, laser irradiation to the buffer layer can also control the density, because the density of the nanowire grown on the laser-irradiated layer was clearly decreased as compared with no-irradiated layer. Furthermore, patterned growth of ZnO nano crystals was demonstrated using four beam interference patterning. The buffer layer and interference laser irradiation can be used as one of the effective additives to control the growth of the ZnO nano crystals synthesized by NAPLD.
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U2 - 10.1007/978-81-322-1160-0_7
DO - 10.1007/978-81-322-1160-0_7
M3 - Chapter
AN - SCOPUS:84884238833
SN - 9788132211594
T3 - Springer Series in Materials Science
SP - 149
EP - 173
BT - ZnO Nanocrystals and Allied Materials
A2 - Ramachandra Rao, M.S.
A2 - Okada, Tatsuo
ER -