Abstract
The electron temperature (Te) in an electron cyclotron resonance plasma is clarified to depend on the spatial profiles of the microwave-power absorption by both the electromagnetic-waves measurement and the simulation of microwave power absorption. It is found that Te is controlled by varying the magnetic field configuration and/or the microwave frequency since the power absorption profile is influenced by the effective resonance width. In fact, Te is observed to decrease with decreasing the magnetic field gradient at the resonance point for N2, Ar and O2/Ar plasma.
Original language | English |
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Pages (from-to) | 59-63 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 457 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jun 1 2004 |
Event | 16th Symposium on Plasma Science for Materials (SPSM-16) - Tokyo, Japan Duration: Jun 4 2003 → Jun 5 2003 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry