Control of structural distortions in transition-metal oxide films through oxygen displacement at the heterointerface

Structural distortions in the oxygen octahedral network in transition-metal oxides play crucial roles in yielding a broad spectrum of functional properties, and precise control of such distortions is a key for developing future oxide-based electronics. Here, it is shown that the displacement of apical oxygen atom shared between the octahedra at the heterointerface is a determining parameter for these distortions and consequently for control of structural and electronic phases of a strained oxide film. The present analysis by complementary annular dark- and bright-field imaging in aberration-corrected scanning transmission electron microscopy reveals that structural phase differences in strained monoclinic and tetragonal SrRuO₃ films grown on GdScO₃ substrates result from relaxation of the octahedral tilt, associated with changes in the in-plane displacement of the apical oxygen atom at the heterointerface. It is further demonstrated that octahedral distortions and magnetrotransport properties of the SrRuO₃ films can be controlled by interface engineering of the oxygen displacement. This provides a further degree of freedom for manipulating structural and electronic properties in strained films, allowing the design of novel oxide-based heterostructures.