Control of Si solid-phase nucleation by surface steps for high performance thin film transistors

Tanemasa Asano; Kenji Makihira

doi:10.7567/ssdm.1992.a-2-1

Control of Si solid-phase nucleation by surface steps for high performance thin film transistors

Tanemasa Asano, Kenji Makihira

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

Solid-phase nucleation process of amorphous Si(a-Si) at steps formed at SiO₂ substrate surface has been investigated. Steps were formed by either isotropic or anisotropic wet chemical etching and a-Si films were deposited by vacuum evaporation. It has been found that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3μm from the step edge has been observed, n-channel MOSFET's which had steps at the source/drain edge were fabricated. They showed effective electron mobility of about 200 cm²/V.s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by the conventional solid phase crystallization.

Original language	English
Pages	29-31
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.a-2-1
Publication status	Published - 1992
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: Aug 26 1992 → Aug 28 1992

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	8/26/92 → 8/28/92

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.7567/ssdm.1992.a-2-1

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title = "Control of Si solid-phase nucleation by surface steps for high performance thin film transistors",

abstract = "Solid-phase nucleation process of amorphous Si(a-Si) at steps formed at SiO2 substrate surface has been investigated. Steps were formed by either isotropic or anisotropic wet chemical etching and a-Si films were deposited by vacuum evaporation. It has been found that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3μm from the step edge has been observed, n-channel MOSFET's which had steps at the source/drain edge were fabricated. They showed effective electron mobility of about 200 cm2/V.s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by the conventional solid phase crystallization.",

author = "Tanemasa Asano and Kenji Makihira",

year = "1992",

doi = "10.7567/ssdm.1992.a-2-1",

language = "English",

pages = "29--31",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

TY - CONF

T1 - Control of Si solid-phase nucleation by surface steps for high performance thin film transistors

AU - Asano, Tanemasa

AU - Makihira, Kenji

PY - 1992

Y1 - 1992

N2 - Solid-phase nucleation process of amorphous Si(a-Si) at steps formed at SiO2 substrate surface has been investigated. Steps were formed by either isotropic or anisotropic wet chemical etching and a-Si films were deposited by vacuum evaporation. It has been found that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3μm from the step edge has been observed, n-channel MOSFET's which had steps at the source/drain edge were fabricated. They showed effective electron mobility of about 200 cm2/V.s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by the conventional solid phase crystallization.

AB - Solid-phase nucleation process of amorphous Si(a-Si) at steps formed at SiO2 substrate surface has been investigated. Steps were formed by either isotropic or anisotropic wet chemical etching and a-Si films were deposited by vacuum evaporation. It has been found that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3μm from the step edge has been observed, n-channel MOSFET's which had steps at the source/drain edge were fabricated. They showed effective electron mobility of about 200 cm2/V.s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by the conventional solid phase crystallization.

UR - http://www.scopus.com/inward/record.url?scp=0026970520&partnerID=8YFLogxK

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DO - 10.7567/ssdm.1992.a-2-1

M3 - Paper

AN - SCOPUS:0026970520

SP - 29

EP - 31

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Control of Si solid-phase nucleation by surface steps for high performance thin film transistors

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