Abstract
Crystal orientations of SrF2and (Ca, Sr)F2films on Si. 100) and. 111) substrates were controlled by intermediate CaF2films which were grown on the substrates prior to growth of lattice-mismatched fluoride films. SrF2films with good crystalline quality were grown epitaxially on the CaF2/Si. 100) structure, though the SrF2films directly grown on Si. 100) were mainly composed of preferentially. 111) oriented crystallites. Similarly, (Ca, Sr)F2films on Si. 111) changed from epitaxial films with internal boundaries between regular and rotationally twinned crystallites to single crystal ones by use of the intermediate CaF2films.
Original language | English |
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Pages (from-to) | 56-58 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 24 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1985 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)