Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors

Fusao Shimokawa; Hidenao Tanaka; Renshi Sawada; Shigeji Hara

doi:10.1063/1.103143

Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors

Fusao Shimokawa, Hidenao Tanaka, Renshi Sawada, Shigeji Hara

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A U-shaped GaAs/AlGaAs laser diode (LD) with totally reflecting mirrors is fabricated. Reactive fast atom beam etching technique with Cl₂ gas is applied to fabricate the totally reflecting mirrors. Continuous-wave operation of the U-shaped LD with two totally reflecting mirrors is achieved using a graded-index separate-confinement-heterostructure single quantum well laser wafer. A threshold current of 75 mA and a light output power of over 5 mW are obtained with a 40-μm-wide and 300-μm-long mesa stripe structure. Totally reflecting mirror loss is estimated from measurements of the threshold current density for different cavity lengths. The loss of the totally reflecting mirror is about 0.95 dB per reflection.

Original language	English
Pages (from-to)	1617-1619
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	17
DOIs	https://doi.org/10.1063/1.103143
Publication status	Published - 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103143

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title = "Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors",

abstract = "A U-shaped GaAs/AlGaAs laser diode (LD) with totally reflecting mirrors is fabricated. Reactive fast atom beam etching technique with Cl2 gas is applied to fabricate the totally reflecting mirrors. Continuous-wave operation of the U-shaped LD with two totally reflecting mirrors is achieved using a graded-index separate-confinement-heterostructure single quantum well laser wafer. A threshold current of 75 mA and a light output power of over 5 mW are obtained with a 40-μm-wide and 300-μm-long mesa stripe structure. Totally reflecting mirror loss is estimated from measurements of the threshold current density for different cavity lengths. The loss of the totally reflecting mirror is about 0.95 dB per reflection.",

author = "Fusao Shimokawa and Hidenao Tanaka and Renshi Sawada and Shigeji Hara",

year = "1990",

doi = "10.1063/1.103143",

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T1 - Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors

AU - Shimokawa, Fusao

AU - Tanaka, Hidenao

AU - Sawada, Renshi

AU - Hara, Shigeji

PY - 1990

Y1 - 1990

N2 - A U-shaped GaAs/AlGaAs laser diode (LD) with totally reflecting mirrors is fabricated. Reactive fast atom beam etching technique with Cl2 gas is applied to fabricate the totally reflecting mirrors. Continuous-wave operation of the U-shaped LD with two totally reflecting mirrors is achieved using a graded-index separate-confinement-heterostructure single quantum well laser wafer. A threshold current of 75 mA and a light output power of over 5 mW are obtained with a 40-μm-wide and 300-μm-long mesa stripe structure. Totally reflecting mirror loss is estimated from measurements of the threshold current density for different cavity lengths. The loss of the totally reflecting mirror is about 0.95 dB per reflection.

AB - A U-shaped GaAs/AlGaAs laser diode (LD) with totally reflecting mirrors is fabricated. Reactive fast atom beam etching technique with Cl2 gas is applied to fabricate the totally reflecting mirrors. Continuous-wave operation of the U-shaped LD with two totally reflecting mirrors is achieved using a graded-index separate-confinement-heterostructure single quantum well laser wafer. A threshold current of 75 mA and a light output power of over 5 mW are obtained with a 40-μm-wide and 300-μm-long mesa stripe structure. Totally reflecting mirror loss is estimated from measurements of the threshold current density for different cavity lengths. The loss of the totally reflecting mirror is about 0.95 dB per reflection.

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Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors

Abstract

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