Conformal deposition of high-purity copper using plasma reactor with H atom source

Hong Jie Jin, Masaharu Shiratani, Yasuhiro Nakatake, Tsuyoshi Fukuzawa, Toshio Kinoshita, Yukio Watanabe, Masaharu Toyofuku

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We have studied the effects of H atoms on the removal of impurities in Cu thin films for plasma chemical vapor deposition (CVD) from Cu(hfac)2. In situ Fourier transform infrared (FT-IR) spectroscopic measurements show that H atoms are very effective in removing impurities in the film for substrate temperatures above 70°C. While H atoms are important to obtain high-purity Cu films, deposition rate and film conformality presumably depends on Cu-containing radicals, which are closely related to the degree of dissociation of Cu(hfac)2. Therefore, we have also demonstrated independent control of both concentration of H atoms and the degree of dissociation of Cu(hfac)2 by using a plasma CVD reactor equipped with an H atom source. Excellent film coverage of above 95% in a trench 0.4 μm wide and 3.25 μm deep is realized by their control.

Original languageEnglish
Pages (from-to)4492-4495
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number7 B
Publication statusPublished - Jul 1999

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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