Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Peter Ramvall; Satoru Tanaka; Shintaro Nomura; Philippe Riblet; Yoshinobu Aoyagi

doi:10.1063/1.124876

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Peter Ramvall, Satoru Tanaka, Shintaro Nomura, Philippe Riblet, Yoshinobu Aoyagi

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al_0.15Ga_0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.

Original language	English
Pages (from-to)	1935-1937
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	13
DOIs	https://doi.org/10.1063/1.124876
Publication status	Published - Sept 27 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124876

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abstract = "We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.",

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T1 - Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

AU - Ramvall, Peter

AU - Tanaka, Satoru

AU - Nomura, Shintaro

AU - Riblet, Philippe

AU - Aoyagi, Yoshinobu

PY - 1999/9/27

Y1 - 1999/9/27

N2 - We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.

AB - We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.

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Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Abstract

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