TY - JOUR
T1 - Conductive and resistive nanocrystalline diamond films studied by Raman spectroscopy
AU - Teii, K.
AU - Ikeda, T.
N1 - Funding Information:
The authors thank Prof. H. Nakashima of Kyushu University for advice on Hall-effect measurement. This research was supported by a grant-in-aid from the Japan–Taiwan Joint Research Program of Interchange Association, Japan.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/4
Y1 - 2007/4
N2 - This paper shows what structural properties of amorphous non-diamond phases in nanocrystalline diamond films are responsible for the transition from resistive to conductive films. The films incorporated with nitrogen, oxygen, and hydrogen are prepared by microwave plasma chemical vapor deposition using Ar-rich gas mixtures. The amount, composition, and bonding properties of non-diamond phases are studied mainly by Raman spectroscopy and compared with the electrical resistivity of the films. The addition of N2 gas decreases the resistivity down to the order of 10- 2 Ω cm for deposition temperatures above a threshold of ∼ 1100 K. Non-diamond phases for high n-type conductivity are characterized by graphitic components with improved sp2 bond angle order for trivalent carbon atoms in addition to C{double bond, long}N bonds. The addition of O2 or H2 gas promotes incorporation of oxygen or hydrogen into the films, not preferential etching of non-diamond phases. The resistivity increases or decreases largely by oxygen or hydrogen incorporation, respectively, then inversely changes by thermal annealing due to the deoxidization and dehydrogenation.
AB - This paper shows what structural properties of amorphous non-diamond phases in nanocrystalline diamond films are responsible for the transition from resistive to conductive films. The films incorporated with nitrogen, oxygen, and hydrogen are prepared by microwave plasma chemical vapor deposition using Ar-rich gas mixtures. The amount, composition, and bonding properties of non-diamond phases are studied mainly by Raman spectroscopy and compared with the electrical resistivity of the films. The addition of N2 gas decreases the resistivity down to the order of 10- 2 Ω cm for deposition temperatures above a threshold of ∼ 1100 K. Non-diamond phases for high n-type conductivity are characterized by graphitic components with improved sp2 bond angle order for trivalent carbon atoms in addition to C{double bond, long}N bonds. The addition of O2 or H2 gas promotes incorporation of oxygen or hydrogen into the films, not preferential etching of non-diamond phases. The resistivity increases or decreases largely by oxygen or hydrogen incorporation, respectively, then inversely changes by thermal annealing due to the deoxidization and dehydrogenation.
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U2 - 10.1016/j.diamond.2006.11.017
DO - 10.1016/j.diamond.2006.11.017
M3 - Article
AN - SCOPUS:34047272527
SN - 0925-9635
VL - 16
SP - 753
EP - 756
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 4-7 SPEC. ISS.
ER -