Conduction type control of ge-on-insulator: Combination of smart-CutTM and defect elimination

K. Yamamoto; K. Nakae; H. Akamine; D. Wang; H. Nakashima; Md M. Alam; K. Sawano; Z. Xue; M. Zhang; Z. Di

doi:10.1149/09301.0073ecst

Conduction type control of ge-on-insulator: Combination of smart-Cut^TM and defect elimination

K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-Cut^TM method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis showed many defects were introduced near the bottom interface and it cannot be recovered by annealing. We suggest alternative ways to avoid defects for n-GOI fabrication.

Original language	English
Title of host publication	ECS Transactions
Editors	M. A. Eriksson, M. G. Lagally
Publisher	IOP Publishing Ltd.
Pages	73-77
Number of pages	5
Edition	1
ISBN (Electronic)	9781607688853, 9781607688853
DOIs	https://doi.org/10.1149/09301.0073ecst
Publication status	Published - 2019
Event	2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference - Madison, United States Duration: Jun 2 2019 → Jun 6 2019

Publication series

Name	ECS Transactions
Number	1
Volume	93
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference
Country/Territory	United States
City	Madison
Period	6/2/19 → 6/6/19

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/09301.0073ecst

Cite this

Yamamoto, K., Nakae, K., Akamine, H., Wang, D., Nakashima, H., Alam, M. M., Sawano, K., Xue, Z., Zhang, M., & Di, Z. (2019). Conduction type control of ge-on-insulator: Combination of smart-Cut^TM and defect elimination. In M. A. Eriksson, & M. G. Lagally (Eds.), ECS Transactions (1 ed., pp. 73-77). (ECS Transactions; Vol. 93, No. 1). IOP Publishing Ltd.. https://doi.org/10.1149/09301.0073ecst

Yamamoto, K, Nakae, K, Akamine, H , Wang, D, Nakashima, H, Alam, MM, Sawano, K, Xue, Z, Zhang, M & Di, Z 2019, Conduction type control of ge-on-insulator: Combination of smart-Cut^TM and defect elimination. in MA Eriksson & MG Lagally (eds), ECS Transactions. 1 edn, ECS Transactions, no. 1, vol. 93, IOP Publishing Ltd., pp. 73-77, 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference, Madison, United States, 6/2/19. https://doi.org/10.1149/09301.0073ecst

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title = "Conduction type control of ge-on-insulator: Combination of smart-CutTM and defect elimination",

abstract = "We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-CutTM method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis showed many defects were introduced near the bottom interface and it cannot be recovered by annealing. We suggest alternative ways to avoid defects for n-GOI fabrication.",

author = "K. Yamamoto and K. Nakae and H. Akamine and D. Wang and H. Nakashima and Alam, {Md M.} and K. Sawano and Z. Xue and M. Zhang and Z. Di",

note = "Funding Information: This study was partially supported by MEXT/JSPS {"}Leading Initiative for Excellent Young Researchers (LEADER){"} program and KAKENHI Grant Number JP18KK0134 and 19K15028. Publisher Copyright: {\textcopyright} The Electrochemical Society.; 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference ; Conference date: 02-06-2019 Through 06-06-2019",

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AU - Yamamoto, K.

AU - Nakae, K.

AU - Akamine, H.

AU - Wang, D.

AU - Nakashima, H.

AU - Alam, Md M.

AU - Sawano, K.

AU - Xue, Z.

AU - Zhang, M.

AU - Di, Z.

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AB - We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-CutTM method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis showed many defects were introduced near the bottom interface and it cannot be recovered by annealing. We suggest alternative ways to avoid defects for n-GOI fabrication.

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