Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Using density functional calculations, we clarify the oxygen incorporation mechanism in vicinal m-GaN growth by metal-organic vapor-phase epitaxy. We first identify reconstructed structures of 5° off m-GaN toward the ±c directions. Next, we explore preferable sites for oxygen substitution near step edges. We find that oxygen prefers the lower nitrogen site of the step edge on the +c 5° off m-GaN substrate compared with that on the-c 5° off m-GaN substrate. This tendency agrees with recent experimental findings that the oxygen concentration in-c 5° off m-GaN epilayers is lower than that in +c 5° off m-GaN epilayers.

Original languageEnglish
Article number055507
JournalApplied Physics Express
Issue number5
Publication statusPublished - May 1 2020

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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