Comprehensive study of low temperature (< 1000 °C) oxidation process in SiGe/SOI structures

Masanori Tanaka, Tatsuo Ohka, Taizoh Sadoh, Masanobu Miyao

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7 Citations (Scopus)


Oxidation of SiGe/SOI (Ge fraction: 0-50%) structures was investigated in a wide temperature range. Different oxidation features were observed for samples oxidized in low (< 680 °C), middle (700-800 °C), and high (> 800 °C) temperature regions. Very thin SiO2 layers (< 150 nm) were formed during low (< 680 °C) temperature oxidation. Thus, the Ge fractions at the SiO2/SiGe interfaces were almost the same as the initial Ge fractions (< 50%). Therefore, the initial Ge fraction dependent enhanced oxidation was observed. On the other hand, very thick SiO2 (> 200 nm) was formed during high (> 800 °C) temperature oxidation. Thus, the oxidation rate was limited by the diffusion process of O in SiO2. Therefore, the oxidation rate did not depend on the Ge fraction. At middle temperatures, the oxidation rate does not depend on the temperature for samples with high initial Ge fractions (> 20%). This is due to that increase in oxidation rate by increasing temperature was cancelled by the retardation of oxidation due to high Ge fractions (> 50%) piled-up at the SiO2/SiGe interfaces.

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalThin Solid Films
Issue number1
Publication statusPublished - Nov 3 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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