TY - JOUR
T1 - Comprehensive study of low temperature (< 1000 °C) oxidation process in SiGe/SOI structures
AU - Tanaka, Masanori
AU - Ohka, Tatsuo
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
SiGe/SOI wafers were supplied by SUMCO. A part of this work was supported by the Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2008/11/3
Y1 - 2008/11/3
N2 - Oxidation of SiGe/SOI (Ge fraction: 0-50%) structures was investigated in a wide temperature range. Different oxidation features were observed for samples oxidized in low (< 680 °C), middle (700-800 °C), and high (> 800 °C) temperature regions. Very thin SiO2 layers (< 150 nm) were formed during low (< 680 °C) temperature oxidation. Thus, the Ge fractions at the SiO2/SiGe interfaces were almost the same as the initial Ge fractions (< 50%). Therefore, the initial Ge fraction dependent enhanced oxidation was observed. On the other hand, very thick SiO2 (> 200 nm) was formed during high (> 800 °C) temperature oxidation. Thus, the oxidation rate was limited by the diffusion process of O in SiO2. Therefore, the oxidation rate did not depend on the Ge fraction. At middle temperatures, the oxidation rate does not depend on the temperature for samples with high initial Ge fractions (> 20%). This is due to that increase in oxidation rate by increasing temperature was cancelled by the retardation of oxidation due to high Ge fractions (> 50%) piled-up at the SiO2/SiGe interfaces.
AB - Oxidation of SiGe/SOI (Ge fraction: 0-50%) structures was investigated in a wide temperature range. Different oxidation features were observed for samples oxidized in low (< 680 °C), middle (700-800 °C), and high (> 800 °C) temperature regions. Very thin SiO2 layers (< 150 nm) were formed during low (< 680 °C) temperature oxidation. Thus, the Ge fractions at the SiO2/SiGe interfaces were almost the same as the initial Ge fractions (< 50%). Therefore, the initial Ge fraction dependent enhanced oxidation was observed. On the other hand, very thick SiO2 (> 200 nm) was formed during high (> 800 °C) temperature oxidation. Thus, the oxidation rate was limited by the diffusion process of O in SiO2. Therefore, the oxidation rate did not depend on the Ge fraction. At middle temperatures, the oxidation rate does not depend on the temperature for samples with high initial Ge fractions (> 20%). This is due to that increase in oxidation rate by increasing temperature was cancelled by the retardation of oxidation due to high Ge fractions (> 50%) piled-up at the SiO2/SiGe interfaces.
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U2 - 10.1016/j.tsf.2008.08.025
DO - 10.1016/j.tsf.2008.08.025
M3 - Article
AN - SCOPUS:54849428712
SN - 0040-6090
VL - 517
SP - 251
EP - 253
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1
ER -