Compositional change of silicon carbide surface due to oxygen adsorption and heat treatment

Hideki Minagawa; Raul Oscar Vina; Tohru Kadowaki; Seigi Mizuno; Hiroshi Tochihara; Kazunobu Hayakawa; Isamu Toyoshima

doi:10.1143/JJAP.31.L1707

Compositional change of silicon carbide surface due to oxygen adsorption and heat treatment

Hideki Minagawa, Raul Oscar Vina, Tohru Kadowaki, Seigi Mizuno, Hiroshi Tochihara, Kazunobu Hayakawa, Isamu Toyoshima

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The compositional change of the 6H-SiC(10&bar1;0) surface was studied under heat treatment and adsorption of oxygen. X-ray photoelectron spectroscopy (XPS) was used for the analysis of the depth composition profile and chemical binding state. After heat treatment, the carbon concentration of the surface was increased due to the surface segregation of the graphite type carbon. When the adsoption of oxygen was performed with heat treatment, the carbon concentration of the surface was increased, but the amount of segregated carbon was less than that of the sample after only heat treatment. The segregated carbon seemed to react with oxygen preferentialy and to desorb from the surface as a carbon monoxide or carbon dioxide.

Original language	English
Pages (from-to)	L1707-L1709
Journal	Japanese journal of applied physics
Volume	31
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.31.L1707
Publication status	Published - Dec 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.31.L1707

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@article{51303d4a716f4387be265a00e5539ec0,

title = "Compositional change of silicon carbide surface due to oxygen adsorption and heat treatment",

abstract = "The compositional change of the 6H-SiC(10&bar1;0) surface was studied under heat treatment and adsorption of oxygen. X-ray photoelectron spectroscopy (XPS) was used for the analysis of the depth composition profile and chemical binding state. After heat treatment, the carbon concentration of the surface was increased due to the surface segregation of the graphite type carbon. When the adsoption of oxygen was performed with heat treatment, the carbon concentration of the surface was increased, but the amount of segregated carbon was less than that of the sample after only heat treatment. The segregated carbon seemed to react with oxygen preferentialy and to desorb from the surface as a carbon monoxide or carbon dioxide.",

author = "Hideki Minagawa and Vina, {Raul Oscar} and Tohru Kadowaki and Seigi Mizuno and Hiroshi Tochihara and Kazunobu Hayakawa and Isamu Toyoshima",

year = "1992",

month = dec,

doi = "10.1143/JJAP.31.L1707",

language = "English",

volume = "31",

pages = "L1707--L1709",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Compositional change of silicon carbide surface due to oxygen adsorption and heat treatment

AU - Minagawa, Hideki

AU - Vina, Raul Oscar

AU - Kadowaki, Tohru

AU - Mizuno, Seigi

AU - Tochihara, Hiroshi

AU - Hayakawa, Kazunobu

AU - Toyoshima, Isamu

PY - 1992/12

Y1 - 1992/12

N2 - The compositional change of the 6H-SiC(10&bar1;0) surface was studied under heat treatment and adsorption of oxygen. X-ray photoelectron spectroscopy (XPS) was used for the analysis of the depth composition profile and chemical binding state. After heat treatment, the carbon concentration of the surface was increased due to the surface segregation of the graphite type carbon. When the adsoption of oxygen was performed with heat treatment, the carbon concentration of the surface was increased, but the amount of segregated carbon was less than that of the sample after only heat treatment. The segregated carbon seemed to react with oxygen preferentialy and to desorb from the surface as a carbon monoxide or carbon dioxide.

AB - The compositional change of the 6H-SiC(10&bar1;0) surface was studied under heat treatment and adsorption of oxygen. X-ray photoelectron spectroscopy (XPS) was used for the analysis of the depth composition profile and chemical binding state. After heat treatment, the carbon concentration of the surface was increased due to the surface segregation of the graphite type carbon. When the adsoption of oxygen was performed with heat treatment, the carbon concentration of the surface was increased, but the amount of segregated carbon was less than that of the sample after only heat treatment. The segregated carbon seemed to react with oxygen preferentialy and to desorb from the surface as a carbon monoxide or carbon dioxide.

UR - http://www.scopus.com/inward/record.url?scp=0026995245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026995245&partnerID=8YFLogxK

U2 - 10.1143/JJAP.31.L1707

DO - 10.1143/JJAP.31.L1707

M3 - Article

AN - SCOPUS:0026995245

SN - 0021-4922

VL - 31

SP - L1707-L1709

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 12

ER -

Compositional change of silicon carbide surface due to oxygen adsorption and heat treatment

Abstract

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