TY - GEN
T1 - Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
AU - Rashid, Nur Nadhirah Mohamad
AU - Aziz, Umar Abdul
AU - Aid, Siti Rahmah
AU - Centeno, Anthony
AU - Matsumoto, Satoru
AU - Xie, Fang
AU - Suwa, Akira
AU - Ikenoue, Hiroshi
N1 - Funding Information:
ACKNOWLEDGMENT This work is supported by Imperial College Global Engagement Grant, Universiti Teknologi Malaysia International Networking Grant (PY/2015/04262), Takasago Research Grant (OTR) (PY/2015/05503; Vote No: 4B211) and Ministry of Education, Malaysia, Universiti Teknologi Malaysia Research University Grant Tier 1 (PY/2016/06558; Vote No: 14H01).
Publisher Copyright:
© 2016 IEEE.
PY - 2017/10/12
Y1 - 2017/10/12
N2 - Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced active carrier concentration attributed to the stress associated with atomic size of the non-dopant. In this work, phosphorus (P) and tin (Sn) have been selected as dopant and non-dopant atoms for the co-implantation process. Theoretical analysis on dopant distribution in the substrate was performed using TRIM software. The calculation predicted a maximum concentration of n-type dopant up to 1E20 cm-3. Fabricated samples were then experimentally analyzed using SIMS for depth profiling. A difference of less than one order of magnitude was observed from the comparison of both results. The difference between TRIM and SIMS is attributed to the sputtering effect and the rise of temperature during co-implantation process.
AB - Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced active carrier concentration attributed to the stress associated with atomic size of the non-dopant. In this work, phosphorus (P) and tin (Sn) have been selected as dopant and non-dopant atoms for the co-implantation process. Theoretical analysis on dopant distribution in the substrate was performed using TRIM software. The calculation predicted a maximum concentration of n-type dopant up to 1E20 cm-3. Fabricated samples were then experimentally analyzed using SIMS for depth profiling. A difference of less than one order of magnitude was observed from the comparison of both results. The difference between TRIM and SIMS is attributed to the sputtering effect and the rise of temperature during co-implantation process.
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U2 - 10.1109/IEACON.2016.8067411
DO - 10.1109/IEACON.2016.8067411
M3 - Conference contribution
AN - SCOPUS:85034013922
T3 - IEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference
SP - 389
EP - 392
BT - IEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE Industrial Electronics and Applications Conference, IEACon 2016
Y2 - 20 November 2016 through 22 November 2016
ER -