Comparison Between Neutron Bragg Dip and Electron Backscatter Diffraction Images of TlBr Semiconductors

Thallium bromide (TlBr) semiconductor detectors are promising candidates for high-detection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. In this study, we conducted neutron Bragg dip and electron backscatter diffraction (EBSD) imaging of TlBr crystals to measure the crystal orientation distribution. We confirmed that crystal grains were continuous over a certain distance along the solidification direction for samples fabricated with the current growth procedure. Finally, we compared the crystal orientation maps obtained with the two techniques. The two types of maps showed similar patterns. We concluded that EBSD, which can observe only surfaces, can be utilized to assess the uniformity of the bulky TlBr crystal, especially when observing the crystal surface perpendicular to the solidification direction.