Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar+-irradiated KTaO3

S. Harashima; C. Bell; M. Kim; T. Yajima; Y. Hikita; H. Y. Hwang

doi:10.1103/PhysRevB.88.085102

Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar⁺-irradiated KTaO³

S. Harashima, C. Bell, M. Kim, T. Yajima, Y. Hikita, H. Y. Hwang

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We report electron doping in the surface vicinity of KTaO³ by inducing oxygen vacancies via Ar⁺ irradiation. The doped electrons have high mobility (>104 cm2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar⁺ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.

Original language	English
Article number	085102
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	88
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.88.085102
Publication status	Published - Aug 2 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.88.085102

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abstract = "We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>104 cm2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.",

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AU - Hikita, Y.

AU - Hwang, H. Y.

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N2 - We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>104 cm2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.

AB - We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>104 cm2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.

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Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar⁺-irradiated KTaO³

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