TY - GEN
T1 - CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si
AU - Yoshiura, Shinichi
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Ohnishi, Osamu
AU - Shinya, Naofumi
PY - 2010
Y1 - 2010
N2 - To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.
AB - To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.
UR - https://www.scopus.com/pages/publications/79957633608
UR - https://www.scopus.com/pages/publications/79957633608#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:79957633608
SN - 9781617822810
T3 - Advanced Metallization Conference (AMC)
SP - 284
EP - 285
BT - Advanced Metallization Conference 2010
T2 - Advanced Metallization Conference 2010
Y2 - 5 October 2010 through 7 October 2010
ER -