CMOS ultra-wideband low noise amplifier design

K. Yousef; H. Jia; R. Pokharel; A. Allam; M. Ragab; H. Kanaya; K. Yoshida

doi:10.1155/2013/328406

CMOS ultra-wideband low noise amplifier design

K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.

Original language	English
Article number	328406
Journal	International Journal of Microwave Science and Technology
DOIs	https://doi.org/10.1155/2013/328406
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1155/2013/328406

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author = "K. Yousef and H. Jia and R. Pokharel and A. Allam and M. Ragab and H. Kanaya and K. Yoshida",

year = "2013",

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T1 - CMOS ultra-wideband low noise amplifier design

AU - Yousef, K.

AU - Jia, H.

AU - Pokharel, R.

AU - Allam, A.

AU - Ragab, M.

AU - Kanaya, H.

AU - Yoshida, K.

PY - 2013

Y1 - 2013

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AB - This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.

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JO - International Journal of Microwave Science and Technology

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CMOS ultra-wideband low noise amplifier design

Abstract

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