CMOS image sensor using SOI-MOS/photodiode composite photodetector device

Yuko Uryo, Tanemasa Asano

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A new photodetector device composed of a lateral junction photodiode and a metal-oxide-semiconductor field-effect-transistor (MOSFET), in which the output of the diode is fed through the body of the MOSFET, has been investigated. It is shown that the silicon-on-insulator (SOI)-MOSFET amplifies the junction photodiode current due to the lateral bipolar action. It is also shown that the presence of the electrically floating gate enhances the current amplification factor of the SOI-MOSFET. The output current of this composite device linearly responds by four orders of illumination intensity. As an application of the composite device, a complementary-metal-oxide-semiconductor (CMOS) line sensor incorporating the composite device is fabricated and its operation is demonstrated. The output signal of the line sensor using the composite device was two times larger than that using the lateral photodiode.

Original languageEnglish
Pages (from-to)2620-2624
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - Apr 2002

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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