Clustering parameter and internal stress in iii-v ternary alloys

Koichi Kakimoto; Takashi Katoda

doi:10.1143/JJAP.24.1022

Clustering parameter and internal stress in iii-v ternary alloys

Koichi Kakimoto, Takashi Katoda

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

An application of laser Raman Spectroscopy to estimate the clustering parameters and internal stress accumulated in each bond in Ga_0.5Al_0.5As, Ga_0.52ln_0.48P, Ga_1-xIn_x (0≤ x ≤ 0.53), and GaAs₀.₇P_0.3 is proposed. The clustering parameters and stress are evaluated from the phonon intensity and the difference between the observed optical phonon frequencies and those calculated in terms of the modified REI model, respectively. The estimated values of the clustering parameter agree fairly well with those obtained from theoretical calculation of the excess free energy of mixing. The bond lengths in Ga_1-xIn_x (0≤ x ≤ 0.53) are derived from the stress, and are compared with published data on extended X-ray absorption fine structure.

Original language	English
Pages (from-to)	1022-1029
Number of pages	8
Journal	Japanese journal of applied physics
Volume	24
Issue number	8 R
DOIs	https://doi.org/10.1143/JJAP.24.1022
Publication status	Published - Aug 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.24.1022

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abstract = "An application of laser Raman Spectroscopy to estimate the clustering parameters and internal stress accumulated in each bond in Ga0.5Al0.5As, Ga0.52ln0.48P, Ga1-xInx (0≤ x ≤ 0.53), and GaAs0.7P0.3 is proposed. The clustering parameters and stress are evaluated from the phonon intensity and the difference between the observed optical phonon frequencies and those calculated in terms of the modified REI model, respectively. The estimated values of the clustering parameter agree fairly well with those obtained from theoretical calculation of the excess free energy of mixing. The bond lengths in Ga1-xInx (0≤ x ≤ 0.53) are derived from the stress, and are compared with published data on extended X-ray absorption fine structure.",

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AU - Kakimoto, Koichi

AU - Katoda, Takashi

PY - 1985/8

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AB - An application of laser Raman Spectroscopy to estimate the clustering parameters and internal stress accumulated in each bond in Ga0.5Al0.5As, Ga0.52ln0.48P, Ga1-xInx (0≤ x ≤ 0.53), and GaAs0.7P0.3 is proposed. The clustering parameters and stress are evaluated from the phonon intensity and the difference between the observed optical phonon frequencies and those calculated in terms of the modified REI model, respectively. The estimated values of the clustering parameter agree fairly well with those obtained from theoretical calculation of the excess free energy of mixing. The bond lengths in Ga1-xInx (0≤ x ≤ 0.53) are derived from the stress, and are compared with published data on extended X-ray absorption fine structure.

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Clustering parameter and internal stress in iii-v ternary alloys

Abstract

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