Cluster-free B-doped a-Si:H films deposited using SiH4 + B 10H14 multi-hollow discharges

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have deposited cluster-free B-doped a-Si:H films using a SiH 4=B10H14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R=[B10H 14]/[SiH4] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8nm/s R=0.0 % to 2.2nm/s for R=0.53%, but SiH emission intensity is almost constant for R=0-2.0%. These results suggest BxH y radicals enhance surface reaction probability of SiH3 radicals. The optical bandgap of films is around 1.9eV, being larger than that of conventional B-doped films.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Number of pages3
Publication statusPublished - 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON


Other2010 IEEE Region 10 Conference, TENCON 2010

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


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